Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 53, Issue 5, Pages 2977-2982Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2006.882777
Keywords
DLTS; extended defects; irradiated silicon carbide; PICTS; silicon carbide detectors
Ask authors/readers for more resources
We report the results of an experimental study on the radiation hardness of 4H-SiC diodes used as alpha-particle detectors with 1 MeV neutrons up to a fluence of 8 x 10(15) n/cm(2). As the irradiation level approaches the range 10(15) n/cm(2), the material behaves as intrinsic due to a very high compensation effect and the diodes are still able to detect with a reasonable good Charge Collection Efficiency (CCE = 80%).For fluences > 10(15) n/cm(2) CCE decreases monotonically to approximate to 20 % at the highest fluence. Heavily irradiated SiC diodes have been studied, by means of Photo Induced Current Transient Spectroscopy (PICTS) technique in order to characterize the electronic levels associated with the irradiation-induced defects. The dominant features of the PICTS spectra occur between 400-700 K; in this temperature range the deep levels associated with the induced defects play the main role in degradation of the CCE. Enthalpy, capture cross-section and concentration of such deep levels were calculated and we found that two deep levels (E-t = 1.18 eV and E-t = 1.50 eV) are responsible for the decrease in CCE. They have been associated to an elementary defect involving a carbon vacancy and to a defect complex involving a carbon and a silicon vacancy, respectively.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available