Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 45, Issue 10A, Pages 7565-7586Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.45.7565
Keywords
widegap semiconductor; GaN; SiC; high-frequency device; switching device; high-power device; high-efficiency; low-loss; high-voltage; large-current
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High-power device technology is a key technological factor for wireless communication, which is one of the information network infrastructures in the 21st century, as well as power electronics innovation, which contributes considerably to solving the energy saving problem in the future energy network. Widegap semiconductors, such as SiC and GaN, are strongly expected as high-power high-frequency devices and high-power switching devices owing to their material properties. In this paper, the present status and future prospect of these widegap semiconductor high-power devices are reviewed, in the context of applications in wireless communication and power electronics.
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