Oxidation of zirconium diboride-silicon carbide at 1500°C at a low partial pressure of oxygen

The oxidation behavior of zirconium diboride containing 30 vol% silicon carbide particulates was investigated under reducing conditions. A gas mixture of CO and similar to 350 ppm CO2 was used to produce an oxygen partial pressure of similar to 10(-10) Pa at 1500 degrees C. The kinetics of the growth of the reaction layer were examined for reaction times of up to 8 h. Microstructures and chemistries of reaction layers were characterized using scanning electron microscopy and X-ray diffraction analysis. The kinetic measurements, the microstructure analysis, and a thermodynamic model indicate that oxidation in CO-CO2 produced a non-protective oxide surface scale.