Journal
PARTICULATE SCIENCE AND TECHNOLOGY
Volume 24, Issue 4, Pages 441-452Publisher
TAYLOR & FRANCIS INC
DOI: 10.1080/02726350600934739
Keywords
charge transfer model; deposition techniques; gas sensors; indium oxide; reducing and oxidizing gases; semiconductor
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Semiconducting In2O3 gas sensors have been fabricated by two different deposition techniques, i.e., spin-coating and screen-printing. In both cases the same starting material - sol-gel-prepared cubic In2O3 - was used for the deposition in order to ensure a better comparability of the different sensing layers. The morphology of the layers has been characterized using scanning electron microscopy (SEM) technique. The layers deposited by different methods show similar grain size and porosity. Furthermore, Dc electrical tests have been performed to analyze the sensing properties of the different gas sensors. Reducing gases (CO and propanal) as well as oxidizing gases (NO2 and ozone) were used as test gases in the background of dry and humidified synthetic air. All measurements were performed at several temperatures. It was found that the spin-coated and screen-printed layers show different sensing properties, i.e., screen-printed sensors showed higher sensor signals than spin-coated sensors for CO, propanal, and NO2. The most striking differences appeared in the detection of ozone. In this case, spin-coated sensors showed a higher performance than screen-printed sensors. Higher ozone concentrations led to saturation effects for the latter.
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