Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 53, Issue 10, Pages 2438-2447Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2006.882274
Keywords
FETs; gallium compounds; infrared (IR) imaging; Raman spectroscopy; simulation
Funding
- Engineering and Physical Sciences Research Council [GR/S76182/01] Funding Source: researchfish
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Self-heating in AlGaN/GaN device structures was probed using integrated micro-Raman/Infrared (IR) thermography. IR imaging provided large-area-overview temperature maps of powered devices. Micro-Raman spectroscopy was used to obtain high-spatial-resolution temperature profiles over the active area of the devices. Depth scans were performed to obtain temperature in the heat-sinking SiC substrate. Limitations in temperature and spatial resolution, and relative advantages of both techniques are discussed. Results are compared to three-dimensional finite-difference simulations.
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