Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 45, Issue 37-41, Pages L1087-L1089Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.45.L1087
Keywords
BiFeO3 film; Cr-doping; chemical solution deposition (CSD); ferroelectric properties
Categories
Ask authors/readers for more resources
Cr-doped BiFeO3 (BFO) thin films were formed by depositing sol-gel solutions on Pt/Ti/SiO2/Si(100) structures. Cr-doping up to 6 at % was effective in suppressing leakage current in the high electric field region and in increasing the remanent polarization. In a 3 at % Cr-doped 350-nm-thick BFO film, the remanent polarization as large as 100 mu C/cm(2) and the coercive field of 260 kV/cm were observed when polarization vs electric field hysteresis loops were drawn at a frequency of 100 kHz with the maximum electric field of 750 kV/cm.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
