Journal
DIAMOND AND RELATED MATERIALS
Volume 15, Issue 10, Pages 1700-1707Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2006.02.005
Keywords
single crystal growth; homoepitaxy; optical properties characterisation; impurity characterisation
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Funding
- Engineering and Physical Sciences Research Council [EP/C00891X/1, GR/S96777/01] Funding Source: researchfish
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Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of nitrogen to the gas phase. Freestanding specimens up to 1.7 mm thick have been characterised using optical absorption, cathodoluminescence, photoluminescence and Raman spectroscopies, and by electron paramagnetic resonance. These techniques all demonstrate that the colourless type IIa material is of excellent quality with total defect concentrations not exceeding 200 ppb, and is ideally suited for optical and electronic applications. (c) 2006 Elsevier B.V. All rights reserved.
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