Temperature dependence of the electric-field gradient in hcp-Cd from first principles

We determine the temperature dependence of the electric-field gradient in hcp-Cd from first principles. The calculations are based on the ab initio determination of the phonon density of states spectrum of the solid. Using only moderate accuracy requirements, the temperature dependence of the electric-field gradient in hcp-Cd is reasonably well reproduced. The origin of its peculiar T-3/2 dependence is discussed.