Journal
RARE METALS
Volume 25, Issue -, Pages 315-319Publisher
NONFERROUS METALS SOC CHINA
DOI: 10.1016/S1001-0521(07)60096-5
Keywords
Cu2ZnSnS4; thin film; solar-cell; ion beam sputtering
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Cu2ZnSnS4(CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed in EDS and XRD analysis when the ratios of the constituents of CZTS thin films are close to stoichiometric by optimizing the conditions of precursor preparation and sulfurization. A low sheet resistivity as about 0.156 Omega center dot cm and a high absorption coefficient as 1 x 10(4) cm(-1) were achieved in this method by Hall effect measurements and UV-VIS spectrophotometer. The optical band-gap energy of the CZTS sample is about 1.51 eV, which is very close to the optimum value for a solar-cell absorber.
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