Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates

Vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors were fabricated by spin-on-glass technology on ZnO:Ga/glass templates. With 2 V applied bias, it was found that dark current density of the fabricated device was only 2.0x10(-7) A/cm(2). It was also found that UV-to-visible rejection ratio and quantum efficiency of the fabricated ZnO nanowire photodetectors were more than 1000 and 12.6%, respectively. (c) 2006 American Institute of Physics.