Journal
MATERIALS CHEMISTRY AND PHYSICS
Volume 99, Issue 2-3, Pages 410-413Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2005.11.021
Keywords
nanoindemation; pop-in; GaN film
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Nanoindentation studies have been carried out on undoped and doped epitaxial GaN thin films with different thickness (1-4 mu m) were grown epitaxially on c-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Multiple discontinuities (so-called 'pop-in' events) were observed in the load-indentation depth curve irrespective of the thickness as well as the doping condition. Atomic force microscopy (AFM) studies on the residual indentation impression revealed no micro-cracks even after the indentation beyond the critical depth. The physical mechanism responsible for the 'pop-in' was explained by the interaction of the deformed region, produced by the indenter tip, with the pre-existing threading dislocation in the epitaxial GaN thin films. (c) 2005 Elsevier B.V. All rights reserved.
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