Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air

Indium-tin-oxide (ITO) thin films on polyethylene napthalate (PEN) with high carrier concentration (similar to 10(21)/cm(3)) have been grown by electron-beam deposition without the introduction of oxygen into the chamber. The electrical properties of the ITO films (such as, carrier concentration, electrical mobility, and resistivity) abruptly changed after annealing in the air atmospheres. In addition, optical transmittance and optical band gap values significantly changed after heat treatment. The optical band gap narrowing behavior is observed in the as-deposited sample because of impurity band and heavy carrier concentration. The influence of annealing in air on the electrical and optical properties of ITO/PEN samples can be explained by the change in the free electron concentration, which is evaluated in terms of the oxygen content. Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy analyses are used to determine the oxygen content in the film. Hall effect measurements are used to determine the dependence of electrical properties on oxygen content. (c) 2006 American Institute of Physics.