☆ 4.6 Article

High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO2 nanoparticle dielectric layer

APPLIED PHYSICS LETTERS (2006)

Rate this paper

The primary rating indicates the level of overall quality for the paper. Secondary ratings independently reflect strengths or weaknesses of the paper.

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO2 nanoparticle dielectric layer

Rate this paper

Find Funding. Review Successful Grants.

Discover Peeref hubs

Export Citation

Share Paper