Charge-injection-induced dynamic screening and origin of hysteresis in field-modulated transport in single-wall carbon nanotubes

Gate modulated transport in semiconducting single-wall carbon nanotubes shows significant hysteresis in their transfer characteristics. The origin of this hysteresis is generally attributed to the screening of the gate voltage due to the movement of mobile charges/ions in the inherent presence of a trapping/detrapping mechanism in the adjacent dielectric, as in conventional silicon metal-oxide-semiconductor field-effect transistors. However, recent works have conjectured that the screening charges may originate from the nanotube itself. From an extensive study of the temperature dependence of the hysteresis behavior in nanotube field-effect transistors the authors experimentally establish this alternative mechanism, in which the screening charges are injected from the nanotube itself into the surrounding dielectric. Any detailed trapping/detrapping mechanism does not appear to play a significant role, and all experimental results can be simply explained in terms of a capacitive charging of the surrounding dielectric due to the charge injection.