Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2364469
Keywords
-
Categories
Ask authors/readers for more resources
The authors have studied the electronic structure of InN and GaN employing G(0)W(0) calculations based on exact-exchange density-functional theory. For InN their approach predicts a gap of 0.7 eV. Taking the Burnstein-Moss effect into account, the increase of the apparent quasiparticle gap with increasing electron concentration is in good agreement with the observed blueshift of the experimental optical absorption edge. Moreover, the concentration dependence of the effective mass, which results from the nonparabolicity of the conduction band, agrees well with recent experimental findings. Based on the quasiparticle band structure the parameter set for a 4 x 4 k center dot p Hamiltonian has been derived. (c) 2006 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available