Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2361268
Keywords
-
Categories
Ask authors/readers for more resources
The influence of electron injection on the electric-pulse-induced resistive switching of Pt/TiO2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N-2 atmosphere or measuring the I-V characteristics at high temperatures (> 100 degrees C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available