Journal
ADVANCED MATERIALS
Volume 18, Issue 20, Pages 2708-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200601080
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Funding
- Engineering and Physical Sciences Research Council [GR/S99075/01] Funding Source: researchfish
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Bright, ambipolar, light-emitting polymer field-effect transistors in a bottom-contact/top-gate structure using poly (9,9-di-n-octylfluorene-altbenzothiadiazole) (F8BT) as a green-emitting semiconductor show balanced hole and electron mobilities, depending on the polymer dielectric. The emission zone, observed as a bright fine in the figure, is well defined and can be moved through the channel.
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