Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2369818
Keywords
-
Categories
Ask authors/readers for more resources
The authors report a direct measurement of the absorption dynamics in an InAs p-i-n ridge waveguide quantum dot modulator. The carrier escape mechanisms are investigated via subpicosecond pump-probe measurements at room temperature, under reverse bias conditions. The optical pulses employed are degenerate in wavelength with the quantum dot ground state transition at 1.28 mu m. The absorption change recovers with characteristic times ranging from 62 ps (0 V) to similar to 700 fs (-10 V), showing a decrease of nearly two orders of magnitude. The authors show that at low applied fields, this recovery is attributed to thermionic emission while for higher applied fields, tunneling becomes the dominant mechanism. (c) 2006 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available