High quality factor Er3+-activated dielectric microcavity fabricated by rf sputtering

The authors report on one-dimensional dielectric photonic crystals activated by Er3+ ion and fabricated by rf-sputtering deposition. The cavity was constituted by an Er3+-doped SiO2 active layer inserted between two Bragg reflectors consisting of six pairs of SiO2/TiO2 layers. Near infrared transmittance spectra evidence the presence of a stop band from 1350 to 1850 nm and a cavity resonance centered at 1537 nm. Intensity enhancement and narrowing of the I-4(13/2)-> I-4(15/2) emission band of Er3+ ion, due to the cavity effect, were observed. A cavity quality factor of 171 was achieved. (c) 2006 American Institute of Physics.