Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2374801
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The authors have introduced a technique to investigate the carrier dynamics of semiconductor nanostructures. Such a technique is based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses by adjusting the temporal delay between them. Their results obtained on the InAs quantum dots embedded in InGaAs/GaAs quantum wells using such a technique indicate that the exciton decay time, integrated photoluminescence intensity, and photoluminescence linewidth exhibit unique dependences on temperature. (c) 2006 American Institute of Physics.
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