High density InAs/GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition

The antimony surfactant-mediated growth of InAs/GaAs quantum dots (QDs) by metal organic chemical vapor deposition was investigated. The authors show that the growth of InAs QDs on Sb:GaAs(100) can result in both a strong increase of the dot density, up to 10(11) cm(-2), and the suppression of coalescence. They achieved InAs/Sb:GaAs QDs with density above 4x10(10) cm(-2), ground-state emission above 1.30 mu m, and enhanced photoluminescence intensity at room temperature compared to that of InAs/GaAs QDs. Remarkably, InAs/Sb:GaAs QDs do not exhibit an emission blueshift under annealing at temperatures as high as 630 degrees C, contrary to InAs/GaAs QDs. (c) 2006 American Institute of Physics.