Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 18, Issue 21-24, Pages 2269-2271Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2006.884884
Keywords
orange-red emission; prestrained InGaN-GaN quantum well (QW); white-light light-emitting diode (LED)
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The implementations of an orange and a red light-emitting diode (LED), which are fabricated with a prestrained InGaN-GaN quantum-well (QW) epitaxy structure, are demonstrated. The prestrain condition is created by growing a low-indium QW before the growth of five high-indium QWs. Without the prestrain condition, the five high-indium QWs of the same growth condition lead to green electroluminescence emission. With the prestrained growth, indium incorporation in the QWs grown after the low-indium one becomes higher and hence the orange-red LEDs can be fabricated for elongating the emission wavelength by more than 100 nm. Although the crystal quality and electrical properties of the orange-red LEDs may need to be improved, our results have shown the important effect of prestrained growth for elongating the LED wavelength.
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