Journal
PHYSICAL REVIEW B
Volume 74, Issue 19, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.74.195302
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Capping of GaN quantum dots with AlN has been studied at the monolayer scale by combining atomic force microscopy, high resolution electron microscopy, and grazing incidence x-ray anomalous diffraction. Consistent with the results provided by these three techniques, it has been demonstrated that, following a wetting of the dots by an AlN layer up to 4 ML coverage, subsequent capping is dominated by a preferential AlN growth in between the dots, eventually resulting in a complete smoothing of AlN. Interdiffusion has been shown to be negligible during this process, which makes the GaN/AlN system unique among semiconductors.
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