Journal
MICROELECTRONIC ENGINEERING
Volume 83, Issue 11-12, Pages 2309-2313Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2006.10.021
Keywords
air gap; sacrificial materials; Undoped Silica glass (USG); fluorhydric acid; copper interconnects; dual damascene architecture
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The formation of intra metal level air cavities using a sacrificial oxide in a Dual Damascene copper interconnect structure was investigated for different HF solutions. In this approach, HF solutions diffuse throughout a porous polymer membrane to realise the cavities within the interconnect stack. Results were discussed in terms of silicon dioxide etching rate, vertical and lateral diffusion behaviour in the porous membrane for three different chemistries. The formation of two oxide levels in the same operation with very short process times (in the range of few minutes) was demonstrated. Main limitations on the current architecture have been evaluated in terms of copper and diffusion barrier integrity and alternative solutions have been proposed to overcome them. (c) 2006 Elsevier B.V. All rights reserved.
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