Journal
PHYSICAL REVIEW B
Volume 74, Issue 20, Pages -Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.74.201302
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We report on the transport measurements of two-dimensional holes in GaAs field-effect transistors with record low densities down to 7x10(8) cm(-2). Remarkably, such a dilute system (with Fermi wavelength approaching 1 mu m) exhibits a nonactivated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly interacting regime.
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