Journal
JOURNAL OF APPLIED PHYSICS
Volume 100, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2363684
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The hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiNx surface layer was found to introduce H into the Si bulk with a concentration of similar to 10(15) cm(-3) under the best conditions investigated here. (c) 2006 American Institute of Physics.
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