Journal
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 54, Issue 11, Pages 3995-4001Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2006.883655
Keywords
conductivity measurement; dielectric losses; dielectric resonators; permittivity measurement; silicon; semiconductor materials measurements
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Funding
- Engineering and Physical Sciences Research Council [GR/S40947/01] Funding Source: researchfish
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The complex permittivity and resistivity of float-zone high-resistivity silicon were measured at microwave frequencies for temperatures from 10 up to 400 K employing dielectric-resonator and composite dielectric-resonator techniques. At temperatures below 25 K, where all free carriers are frozen out, loss-tangent values of the,order of 2 x 10(-4) were measured, suggesting the existence of hopping conductivity or surface charge carrier conductivity in this temperature range. Use of a composite dielectric-resonator technique enabled the measurement of materials having higher dielectric losses (or lower resistivities) with respect to the dielectric-resonator technique. The real part of permittivity of silicon proved to be frequency independent. Dielectric losses of high-resistivity silicon at microwave frequencies are mainly associated with conductivity and their behavior versus temperature can be satisfactory described by dc conductivity models, except at very low temperatures.
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