Journal
DIAMOND AND RELATED MATERIALS
Volume 15, Issue 11-12, Pages 1784-1788Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2006.09.008
Keywords
diamond growth; high growth rate; pressure dependence; methane concentration dependence
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The influence of total gas pressure (50-125 Torr) and methane concentration (0.75%-10%) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process. (c) 2006 Elsevier B.V All rights reserved.
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