Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 18, Issue 21-24, Pages 2508-2510Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2006.887211
Keywords
avalanche photodiode (APD); impact ionization; photodetector; silicon carbide; ultraviolet (UV)
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We report electrical and electrooptical characteristic of mesa-structure 6H-SiC PIN avalanche photodiodes. At a gain of 1000, the dark current density is 9.2 mu A/cm(2). The excess noise factor corresponds to a k value of similar to 0.1. In addition, peak resoponsivity of 80 mA/W was observed at 290 nm (external quantum efficiency of similar to 35%).
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