Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 41, Issue 11, Pages 2424-2439Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2006.883336
Keywords
bandwidth extension; low-noise amplifier; low-power; peaking; staggering; T-coil; transformer; ultra-wide-band (UWB); wireless; wireline
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Inductive-peaking-based bandwidth extension techniques for CMOS amplifiers in wireless and wireline applications are presented. To overcome the conventional limits on bandwidth extension ratios, these techniques augment inductive peaking using capacitive splitting and magnetic coupling. It is shown that a critical design constraint for optimum bandwidth extension is the ratio of the drain capacitance of the driver transistor to the load capacitance. This, in turn, recommends the use of different techniques for different capacitance ratios. Prototype wideband amplifiers in 0.18-mu m CMOS are presented that achieve a measured bandwidth extension ratio up to 4.1 and simultaneously maintain high gain (> 12 dB) in a single stage. Even higher enhancement ratios are shown through the introduction of a modified series-peaking technique combined with staggering techniques. Ultra-wideband low-noise amplifiers in 0.18-mu m CMOS are presented that exhibit bandwidth extension ratios up to 4.9.
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