AlInP-AlGaInP quantum-well lasers grown by molecular beam epitaxy

We have examined a possibility to use an AlxIn1-xP layer as an active region of a 650-nm semiconductor laser. Encouraging results have been obtained with compressively strained oxide-stripe AlInP-AlGaInP quantum-well lasers, which operated in continuous-wave mode at room temperature, producing an optical power of 460 and 320 mW per uncoated facet at 10 degrees C and 20 degrees C, respectively. In pulsed mode, a power level of 780 mW/facet was achieved at 2-A drive current at 5 degrees C. The results indicate that wide-bandgap AlInP affords an opportunity to develop lasers for the wavelengths 600 <= lambda <= 6.50 nm, which is difficult to achieve by any semiconductor heterostructure.