Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 18, Issue 21-24, Pages 2257-2259Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2006.884730
Keywords
AlGaInP; AlInP; molecular beam epitaxy; semiconductor laser
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We have examined a possibility to use an AlxIn1-xP layer as an active region of a 650-nm semiconductor laser. Encouraging results have been obtained with compressively strained oxide-stripe AlInP-AlGaInP quantum-well lasers, which operated in continuous-wave mode at room temperature, producing an optical power of 460 and 320 mW per uncoated facet at 10 degrees C and 20 degrees C, respectively. In pulsed mode, a power level of 780 mW/facet was achieved at 2-A drive current at 5 degrees C. The results indicate that wide-bandgap AlInP affords an opportunity to develop lasers for the wavelengths 600 <= lambda <= 6.50 nm, which is difficult to achieve by any semiconductor heterostructure.
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