Journal
JOURNAL OF PHYSICAL CHEMISTRY B
Volume 110, Issue 43, Pages 21408-21411Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp065298f
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Field effect transistors have been fabricated using Bi2S3 nanowires. Whether the contact is ohmic or non-ohmic, the current of Bi2S3 nanowires was found to increase remarkably in H-2 compared to that in a vacuum. Carrier density and mobility within the nanowires and the contact barriers between the nanowires and the electrodes have been extracted using field effect and two-probe current-voltage curves. It was found that H-2 enhances electronic mobility and carrier density within the nanowires dramatically. The effect of H-2 on the contact barriers was observed to be negligible compared to the other two effects.
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