Growth and fabrication of InGaNP-based yellow-red light emitting diodes

The authors describe the growth and fabrication of InGaNP quantum well (QW)-based yellow-red light emitting diodes (LEDs) grown directly on transparent GaP (100) wafers. The dependence of InyGa1-yN0.005P0.995/GaP conduction and valence band offsets on the In composition was calculated, and the dependence of AlxGa1-xP/GaP band offsets on the Al concentration was also calculated. Using Al0.14Ga0.86P cladding layers increases the light output from a LED chip by 15%. InGaNP/GaP multiple QW LED structures show an increase of light output and saturation current. (c) 2006 American Institute of Physics.