Journal
SENSORS AND ACTUATORS A-PHYSICAL
Volume 132, Issue 1, Pages 289-295Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2006.03.028
Keywords
thermoelectric power; wafer level; CMOS
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We propose a method aimed at executing accurate thermoelectric power measurements at the wafer level on micromachined test structures. In order to compensate for instrumental offsets and sensitivity limits typically existing in a standard wafer-level test instrumentation, a special purpose extraction technique is applied. The influence of air-convection and heating/cooling effects on the measurement is also discussed by carefully evaluating the results of finite-element simulations of heat exchange in the test structure. In order to validate the technique, test measurements on p and n-doped polysilicon layers are presented and compared with other results from the literature. Moreover, the accuracy of the measurement technique and its temperature resolution are discussed. (c) 2006 Elsevier B.V All rights reserved.
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