Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2390634
Keywords
-
Categories
Ask authors/readers for more resources
Microcrystalline silicon thin-film transistors were prepared by plasma-enhanced chemical vapor deposition at substrate temperatures below 200 degrees C. The transistors exhibit electron mobilities of 38 cm(2)/V s, threshold voltages in the range of 2 V, and subthreshold slopes of 0.3 V/decade. Despite the realization of transistors with high carrier mobility, contact effects limit the performance of the transistors. The influence of the drain and source contacts on device parameters including the mobility, the threshold voltage, and the subthreshold slope will be discussed in detail. (c) 2006 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available