Journal
APPLIED SURFACE SCIENCE
Volume 253, Issue 2, Pages 651-654Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2005.12.146
Keywords
scanning tunneling microscopy (STM); barrier height (BH); decay rate; surface local density of state (LDOS); Ag; Si(111)
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We investigated the bias voltage polarity dependence of atomically resolved barrier height (BH) images on Si(1 1 1)3 x 1-Ag surfaces. The BH images were very similar to scanning tunneling microscopy (STM) images in both the empty and filled states. This similarity strongly supports the interpretation that the BH image reflects the vertical decay rate of the surface local density of states (LDOS). Differences in contrast and protrusion shapes between BH and STM images were observed. We attributed these differences to the geometric contribution to the STM image and to the improved spatial resolution of the BH image due to the lock-in technique. (c) 2006 Elsevier B.V. All rights reserved.
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