Journal
OPTICS COMMUNICATIONS
Volume 267, Issue 2, Pages 433-439Publisher
ELSEVIER
DOI: 10.1016/j.optcom.2006.06.049
Keywords
ZnO; ZnO : Ce; photoluminescence; X-ray diffraction
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In this paper, zinc oxide (ZnO) and cerium-doped zinc oxide (ZnO:Ce) films were deposited by reactive chemical pulverization spray pyrolysis technique using zinc and cerium chlorides as precursors. The effects of Cc concentration on the structural and optical properties of ZnO thin films were investigated in detail. These films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) measurements. All deposited ZnO layers at the temperature 450 degrees C are polycrystalline and indicate highly c-axis oriented structure. The dimension of crystallites depends on incorporation of Ce atoms into the ZnO films. The photoluminescence spectra of the films have been studied as a function of the deposition parameters such as doping concentrations and post grows annealing. Photoluminescence spectra were measured at the temperature range from 13 K to 320 K. (c) 2006 Elsevier B.V. All rights reserved.
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