Journal
JOURNAL OF PHYSICAL CHEMISTRY B
Volume 110, Issue 45, Pages 22339-22345Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp064275y
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ZnS semiconductor quantum dots have been synthesized using a method involving melt exchange reaction inside the pores of MCM-41 and subsequent reaction with H2S. The ZnS quantum dots-MCM-41 composite, which has been studied with XRD, EDS, and BET techniques, is shown to have retained within the pores the formed quantum dots, with a size distribution exhibiting a maximum nanoparticle diameter of ca. 1.8 nm. The structure and the sorption properties of the ZnS/MCM-41 composite have been studied by means of X-ray diffraction, Fourier transform infrared spectroscopy, and surface area measurements. All experimental data reveal that all the final composite products, containing up to 9.3 wt % ZnS as verified by EDS analysis, keep the basic structural characteristics of MCM-41 materials, without significant reduction of their active surface areas. The quantum dot optical properties have been studied with UV-vis, photoluminescence, and photoluminescence excitation spectroscopies providing evidence for the low-dimensional character of the ZnS semiconductor particles.
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