Poly(2,5-bis(2-thienyl)-3,6-dialkylthieno[3,2-b]thiophene)s-high-mobility semiconductors for thin-film transistors

Field-effect transistor properties, structural design, synthesis, and characterization of the poly(2,5-bis(2-thienyl)-3,6dialkylthieno[3,2-blthiophene) thin-film semiconductors shown in the figure are described. Using low-temperature solution fabrication of channel semiconductors under ambient conditions, a mobility of 0.25 cm(2) V-1 sm(-1) and a current on/off ratio of W are obtained.