Simple approach to β-SiC nanowires:: Synthesis, optical, and electrical properties

High-quality beta-SiC nanowires were synthesized on activated carbon fiber via a thermal evaporation method without the use of metal catalyst. Their structure and chemical composition were studied by Raman spectroscopy and high-resolution electron microscopy. Field effect transistors were fabricated to investigate the beta-SiC nanowire electrical behavior possessing n-channel characterization. The carrier mobility of the devices was 15.9 cm(2)/V s when the V-ds is 0.01 V. This result contributes to the development of efficient nanodevices based on beta-SiC nanowires, as well as nanocomposites. (c) 2006 American Institute of Physics.