Journal
SOLID STATE IONICS
Volume 177, Issue 35-36, Pages 3123-3127Publisher
ELSEVIER
DOI: 10.1016/j.ssi.2006.07.036
Keywords
indium tin oxide; Fermi level; high pressure XPS; surface states
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The Fermi level position at surfaces of tin-doped indium oxide (ITO) thin films has been recorded during oxygen exposure using high-pressure photoelectron spectroscopy at the BESSY storage ring. The rate of Fermi level shifts varies considerably depending on the surface electron concentration, which is determined by the Fermi level position with respect to the energy of surface states. (c) 2006 Elsevier B.V. All rights reserved.
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