Journal
APPLIED SURFACE SCIENCE
Volume 253, Issue 3, Pages 1243-1246Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2006.01.071
Keywords
wafer bonding; SOI; InP; oxygen plasma; micro-Raman; thin-film
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Using a low-temperature wafer bonding process, InP substrates are bonded to silicon-on-insulator (SOI) substrates at 220 degrees C. A combination of oxygen plasma and chemical treatment results in a direct contact bonding at room temperature. After the bonding process at 220 degrees C for 45 min, removal of the Si handle substrate by sacrificial etching of the buried oxide layer in SOI, results in a thin membrane of Si robustly bonded to InP. The thin Si membrane bonded to InP shows uniformly bonded interface under high-resolution electron microscopy. Micro-Raman analysis has also been carried out to study the bonded interface. I-V characteristics of the bonded structures suggest that such bonding and layer transfer processes are suitable for device integration. (c) 2006 Elsevier B.V. All rights reserved.
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