Journal
SEMICONDUCTORS
Volume 40, Issue 12, Pages 1402-1408Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063782606120062
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A theory of spin-dependent resonance tunneling through a double-barrier heterostructure in the presence of an electric field is developed. Spin-orbit interaction is taken into account by introducing the Dresselhaus term into the effective Hamiltonian. The possibility of fabricating the spin detectors and injectors based on a GaAlSb nonmagnetic semiconductor heterostructure controlled by electric field is analyzed.
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