Kondo shuttling in a nanoelectromechanical single-electron transistor

We investigate theoretically a mechanically assisted Kondo effect and electric charge shuttling in a nanoelectromechanical single-electron transistor. It is shown that the mechanical motion of the central island (a small metallic particle) with the spin results in a time-dependent tunneling width Gamma(t) which leads to an effective increase of the Kondo temperature. The time-dependent oscillating Kondo temperature T(K)(t) changes the scaling behavior of the differential conductance, resulting in the suppression of transport in a strong-coupling and its enhancement in a weak-coupling regime. The conditions for fine-tuning of the Abrikosov-Suhl resonance and possible experimental realization of the Kondo shuttling are discussed.