Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 53, Issue 6, Pages 3343-3348Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2006.885165
Keywords
heavy ion; Schottky barrier diode; silicon carbide; single-event burnout
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It was demonstrated that Silicon Carbide Schottky Barrier Diodes exhibited anomalous charge collection with heavy ion irradiation. Consequently, the permanent damage and Single-Event Burnout was observed in spite of no known current sustaining mechanism. A model for the mechanism was proposed based on the device simulation.
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