Journal
MATERIALS LETTERS
Volume 60, Issue 29-30, Pages 3468-3470Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2006.03.033
Keywords
delafossite; oxide; thin film; rf-sputtering; synthesis
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CuFeO2 is a delafossite-type compound and is a well known p-type semiconductor. The growth of delafossite CuFeO2 thin films on conventional glass substrate by radio-frequency sputtering is reported. The deposition, performed at room temperature leads to an amorphous phase with extremely low roughness and high density. The films consisted of a well crystallized delafossite CuFeO2 after heat treatment at 450 degrees C in inert atmosphere. The electrical conductivity of the film was I mS/cm. The direct optical band gap was estimated to be 2 eV (c) 2006 Elsevier B.V. All rights reserved.
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