4.6 Article

A CMOS imager with column-level ADC using dynamic column fixed-pattern noise reduction

Journal

IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 41, Issue 12, Pages 3007-3015

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2006.884866

Keywords

A/D conversion; CMOS image sensors; column FPN reduction; column-level ADCs; dynamic offset cancellation

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This paper presents a CMOS imager with column-level ADC that uses a dynamic column fixed-pattern noise (FPN) reduction technique. This technique, called dynamic column switching (DCS), strongly reduces the perceptual effects of nonuniformities introduced by the column-level ADC or any other column-wise circuit element. This relaxes the uniformity requirements on the column-level ADC circuitry, which can significantly decrease power consumption and chip area. The proposed DCS technique requires only five transistors per column and minimal digital overhead at the chip level. A prototype was realized in a 0.18 mu m CMOS process. The implemented column-level ADC uses a single-slope architecture and features a low-power column circuit design. In the measured images, the application of dynamic column switching make a column FPN of +/- 0.67% of full scale nearly invisible to the human eye.

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