Journal
SCRIPTA MATERIALIA
Volume 55, Issue 11, Pages 987-990Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2006.08.029
Keywords
metal-induced crystallisation; interfaces; grain boundary wetting; thermodynamics; X-ray diffraction
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The crystallisation of amorphous germanium in contact with aluminium was studied in Ge/Al layer systems by employing in situ and ex situ X-ray diffraction methods. Comparing Ge/Al and Si/Al systems, totally different crystallisation behaviours were observed. Amorphous Ge in contact with Al shows an explosive crystallisation at temperatures as low as 150 degrees C, whereas amorphous Si exhibits a gradual crystallisation accompanied by a simultaneous layer exchange between Si and Al layers. The observations have been interpreted on a thermodynamic basis. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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