Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2403902
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Single crystal gamma-Al2O3 thin films have been epitaxially grown by molecular beam epitaxy at 850 degrees C on Si(001) substrates. Reflection high energy electron diffraction and transmission electron microscopy experiments evidence the good crystalline quality of the Al2O3 layer. The present study shows that the two first monolayers of gamma-Al2O3 are (001) oriented and coherently strained on Si. For larger thickness, a transition from (001)- to (111)-oriented Al2O3 occurs, together with the apparition of domains in the layer. In-plane epitaxial relationship between Al2O3 and Si(001) are deduced from these observations. (c) 2006 American Institute of Physics.
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