Journal
ADVANCED MATERIALS
Volume 18, Issue 23, Pages 3179-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200601434
Keywords
-
Ask authors/readers for more resources
An organic field-effect transistor (OFET) memory device based on pentacene poly(alpha-methyl styrene) gate dielectric layer (P alpha MS, see figure) that has charge-trapping ability (an electret). The device has excellent non-volatile OFET memory characteristics, believed to originate from the stored charges in PaMS layer and transferred from the semiconductor to the polymeric gate electret.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available